d a t a sh eet product speci?cation supersedes data of 1997 mar 27 1999 apr 15 discrete semiconductors bc556; bc557 pnp general purpose transistors b ook, halfpage m3d186
1999 apr 15 2 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 features low current (max. 100 ma) low voltage (max. 65 v). applications general purpose switching and amplification. description pnp transistor in a to-92; sot54 plastic package. npn complements: bc546 and bc547. pinning pin description 1 emitter 2 base 3 collector fig.1 simplified outline (to-92; sot54) and symbol. handbook, halfpage 1 3 2 mam281 3 2 1 limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter bc556 -- 80 v bc557 -- 50 v v ceo collector-emitter voltage open base bc556 -- 65 v bc557 -- 45 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 100 ma i cm peak collector current -- 200 ma i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c - 500 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c
1999 apr 15 3 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t j =25 c unless otherwise speci?ed. notes 1. v besat decreases by about - 1.7 mv/k with increasing temperature. 2. v be decreases by about - 2 mv/k with increasing temperature. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 250 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = - 30 v -- 1 - 15 na i e = 0; v cb = - 30 v; t j = 150 c --- 4 m a i ebo emitter cut-off current i c = 0; v eb = - 5v --- 100 na h fe dc current gain i c = - 2 ma; v ce = - 5v; see figs 2, 3 and 4 bc556 125 - 475 bc557 125 - 800 bc556a 125 - 250 bc556b; bc557b 220 - 475 bc557c 420 - 800 v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma -- 60 - 300 mv i c = - 100 ma; i b = - 5ma -- 180 - 650 mv v besat base-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma; note 1 -- 750 - mv i c = - 100 ma; i b = - 5 ma; note 1 -- 930 - mv v be base-emitter voltage i c = - 2 ma; v ce = - 5 v; note 2 - 600 - 650 - 750 mv i c = - 10 ma; v ce = - 5 v; note 2 --- 820 mv c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz - 3 - pf c e emitter capacitance i c =i c = 0; v eb = - 0.5 v; f = 1 mhz - 10 - pf f t transition frequency i c = - 10 ma; v ce = - 5 v; f = 100 mhz 100 -- mhz f noise ?gure i c = - 200 m a; v ce = - 5 v; r s =2k w ; f = 1 khz; b = 200 hz - 210db
1999 apr 15 4 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 fig.2 dc current gain; typical values. handbook, full pagewidth 0 300 100 200 mbh726 - 10 - 1 h fe - 1 i c (ma) - 10 - 10 3 - 10 2 v ce = - 5 v bc556a. fig.3 dc current gain; typical values. handbook, full pagewidth 0 300 200 100 400 mbh727 - 10 - 2 - 10 - 1 h fe - 1 i c (ma) - 10 - 10 3 - 10 2 v ce = - 5 v bc556b; bc557b.
1999 apr 15 5 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 fig.4 dc current gain; typical values. handbook, full pagewidth 0 300 200 100 600 500 400 mbh728 - 10 - 2 - 10 - 1 h fe - 1 i c (ma) - 10 - 10 3 - 10 2 v ce = - 5 v bc557c.
1999 apr 15 6 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 package outline unit a references outline version european projection issue date iec jedec eiaj mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) 2.5 b 1 0.66 0.56 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43 97-02-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
1999 apr 15 7 philips semiconductors product speci?cation pnp general purpose transistors bc556; bc557 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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